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Model Package Parameter value Internal structure Appearance image PDF
LM2904 SOP-8 Input bias current IB: 5nA, input offset voltage (Vos): 5mV, See LM2904
LM2903 SOP-8 Input offset voltage (Vos): 5mV, input bias current (Ib): 250nA See PDF LM2903
DB157S DBS Voltage: 1000V, current: 1.5A, voltage drop: 1.1V, See PDF DB157S
DB307S DBS Voltage: 1000V, current: 3A, voltage drop: 1.1V, See PDF DB307S
DB207S DBS Voltage: 1000V, current: 2A, voltage drop: 1100mV, See PDF DB207S
DB107S DBS Voltage: 1000V, current: 1A, voltage drop: 1100mV, see PDF DB107S
MB10S MBS Voltage: 1000V, current: 0.8A, voltage drop: 1V, See PDF MB10S
MB6S MBS Voltage: 600V, current: 0.8A, voltage drop: 1000mV, See PDF MB6S
MB10F MBF Voltage: 1000V, current: 1A, voltage drop: 1100mV See PDF MB10F
MB6F MBF Current: 1A, Voltage: 600V, Voltage Drop: 1V See PDF MB6F
ABS210 ABS Voltage: 1000V, current: 2A, voltage drop: 1000mV, See PDF ABS210
ABS10 ABS Voltage: 1000V, current: 1A, voltage drop: 1V, See PDF ABS10
BT138S-800E-AY TO-252-2L Voltage: 800V, Current: 12A, See PDF BT138S-800E-AY
BT137S-800E-AY TO-252-2L Voltage: 800V, Current: 8A, See PDF BT137S-800E-AY
BT136S-800E-AY TO-252-2L Voltage: 800V, Current: 4A, See PDF BT136S-800E-AY
BTA16-600B-AY TO-220 Type of thyristor: bidirectional thyristor, gate trigger voltage (Vgt): 1.3V, holding current (Ih): 25mA, off state peak voltage (Vdrm): 600V See PDF BTA16-600B-AY
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